Low inductive SiC Mold Module with direct cooling
Conference: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/07/2019 - 05/09/2019 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2019
Pages: 6Language: englishTyp: PDF
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Authors:
Marczok, Christoph; Hoene, Eckart; Thomas, Tina (Fraunhofer IZM, Germany)
Meyer, Andreas; Schmidt, Karsten (Rogers Germany GmbH, Germany)
Abstract:
To make use of the superior properties of Wide Band Gap (WBG) semiconductors power modules need an optimum thermal performance, good parasitic electromagnetic properties, a high temperature capability and the possibility for a high degree of integration. This investigation demonstrates a new setup for power modules with SiC power MOSFETs using multilayer ceramic substrates with direct substrate water-cooling. The power modules are encapsulated by transfer molding with a metallized and structured copper layer on top. SMD components are soldered directly on this metallization. Finally, the paper shows the double pulse switching results of the power module.