New 6.5kV/1000A modules with LOCOS Trench Oxide IGBT Chips and Design Variation for Traction and HVDC Applications
Conference: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/07/2019 - 05/09/2019 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2019
Pages: 5Language: englishTyp: PDF
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Authors:
Ngwendson, Luther-King; Deviny, Ian; Zhu, Chunlin; Saddiqui, Imran; Kong, Chris; Birkett, Mark; Coulbeck, Lee; Hutchings, John; Wang, Yangang; Garraway, Tony; Thomson, Jim; Briggs, Mark; Basset, Owen (Dynex Semiconductor Ltd, UK)
Abstract:
In this paper, we present the design features and test results of new 6.5kV/1000A modules with LOCOS Trench Oxide (LTO) IGBT chips operating at maximum junction temperature of 150 °C. A nitride LOCOS (Local Oxidation of Silicon) process has been used to achieve IGBT trench gates with thick bottom oxide to ensure long term reliability performance. It is shown that an optmised top cell IGBT design enables optimisation for the technology to target both the low conduction loss HVDC and the low switching loss traction markets with only change in the collector and buffer design.