Improvements on Dynamic On-State Resistance in Normally-off GaN HEMTs
Conference: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/07/2019 - 05/09/2019 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2019
Pages: 8Language: englishTyp: PDF
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Authors:
Kuring, Carsten; Dieckerhoff, Sibylle (Chair of Power Electronics, Technische Universität Berlin, Germany)
Tannhaeuser, Marvin (Siemens AG, Corporate Technology, Software Defined Inverter, Germany)
Abstract:
The use of gallium nitride (GaN) wide-bandgap power semiconductors with small on-state resistance and small parasitic capacitances promises minimized conduction and switching losses in power electronic converters. The increase of the dynamic on-state resistance in normally-off GaN High Electron Mobility Transistors (HEMT) related to charge trapping and hot electron injection directly affects conduction losses and reduces the achievable benefit of GaN devices in power electronics. This paper demonstrates that the extend of dynamic Ron-increase significantly depends on the operation conditions and exemplarily shows recent improvements of commercially available devices.