Combining the benefits of SiC T-MOSFET and Si IGBT in a novel ANPC power module for highly compact 1500-V grid-tied inverters

Abstract:
This paper proposes a special adaptation of the ANPC topology to optimally combine the latest 1200-V SiC T-MOSFET with IGBT technology in a cost-effective way. A new power module with a fully integrated ANPC topology is being presented enabling the implementation of highly compact and efficient 1500-V grid-tied inverters. An output power of more than 200 kW at 48 kHz could be possible with the newly developed Easy3B power module. Moreover, an almost circular P-Q diagram could be achieved which supports emerging applications such as energy storage systems.