High current welding diodes: Impact of silicon wafer thickness and diffusion profile on forward voltage drop
Conference: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/07/2019 - 05/09/2019 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2019
Pages: 4Language: englishTyp: PDF
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Authors:
Vosvrdova, Adela; Pina, Libor; Radvan, Ladislav (ABB, Czech Republic)
Abstract:
The welding diode design is analyzed using device simulations as well as electrical measurements to carry out an optimal technology from the performance point of view; especially low forward voltage drop, reproducibility of processing and high yield are desired. A new diffusion process is demonstrated as an enabler of superior electrical performance without necessity of aggressive wafer thinning.