Interconnection Technology for 10 kV SiC Power Module
Conference: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/07/2019 - 05/09/2019 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2019
Pages: 7Language: englishTyp: PDF
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Authors:
Duchesne, Cyrille; Tarrieu, Julie; Lasserre, Philippe (DEEP Concept, France)
Abstract:
High power electronics is the key technology to build the next generation of the electrical power system. New wide band-gap material with substantial application benefit will need some time to enter the high power market. The substantial improvement of conventional silicon (Si) devices with junction temperature reaching levels from 150 ºC to 200 ºC and voltage levels up to 10 kV will first impact high power electronics. The aim of this works is to present design principles, dielectric measurements and electrical characteristics of a 10 kV SiC prototype obtained by the use of new assembly.