A novel application kit design accelerating the performance of Danfoss’ 1.2 kV SiC DCMTM1000X for EV drivetrains

Abstract:
Commutation loop stray inductances and layout asymmetries cause multiple complications in high speed switching devices and should be minimized during the design stage to avoid subsequent power module de-rating. Such complications can include large voltage overshoot, ringing with semiconductor parasitic capacitance and current sharing mismatch, to name a few. This paper considers the design, simulation and experimental validation of a fully integrated DC-link capacitor and busbar “application kit” exclusively designed to enhance the performance of Danfoss’ direct cooled molded DCM(TM)1000X platform, utilizing the latest generation of 1200 V SiC MOSFET with a current rating ranging from 200 A up to 800 A. Electromagnetic simulation using Ansys Q3D Extractor has been carried out to extract and evaluate the total commutation inductance and current density distribution on a classic 2-level inverter structure. Dynamic switching and full frequency test have been performed to validate the overall design.