A Fast and Accurate SiC MOSFET Compact Model for Virtual Prototyping of Power Electronic Circuits
Conference: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/07/2019 - 05/09/2019 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2019
Pages: 8Language: englishTyp: PDF
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Authors:
Sochor, Paul; Huerner, Andreas; Elpelt, Rudolf (Infineon Technologies AG, Schottkystr. 10, 91058 Erlangen, Germany)
Abstract:
Power semiconductor compact models assist engineers throughout the development process of power electronic circuits by predicting and verifying the behavior of fast switching SiC MOSFETs in a virtual prototyping environment. This paper discusses a SPICE-based simulation model for the 1200-V, 45-mOmega CoolSiCTM SiC MOSFET that is both accurate and, owing to its compact structure, fast and robust in convergence. This enables, besides traditional double-pulse, also multi-pulse simulations of entire power circuits at the system level. A thorough comparison between simulation and measurement data shows a very good agreement over a wide range of parameter variations in both static and dynamic behavior.