3.3 kV, 1200A Si-SiC hybrid technology using 1.7 kV SiC diodes
Conference: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/07/2019 - 05/09/2019 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2019
Pages: 4Language: englishTyp: PDF
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Authors:
Sharma, Yogesh K.; Mumby-Croft, Paul; Roose, Thomas; Deviny, Ian (Dynex Semiconductor, Doddington Rd, Lincoln LN6 3LF, UK)
Wang, Yangang (Dynex Semiconductor, Doddington Rd, Lincoln LN6 3LF, UK & State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou CRRC Times Electric Co., Ltd., Zhuzhou, Hunan 412001, China)
Abstract:
In Si IGBT modules, anti-parallel Si diodes are considered as a weak link which limits the switch (IGBT) from operating at its full potential. This is caused by the reverse recovery behaviour of the Si diodes, and the problem is more pronounce for high power modules. On the other hand, SiC Schottky diodes have low reverse recovery and present an alternative to circumvent this problem. In this paper 3.3 kV, 1200 A Si-SiC hybrid modules are built using 3.3 kV Si IGBT and 1.7 kV, 50 A SiC diodes. Various electrical tests are performed on these modules to benchmark their performance against Si modules having similar ratings. This is the first generation hybrid module, in future the work will be undertaken to optimize the design to reduce the stray parameters of the module.