Switching Characteristics of a 1.2 kV SiC MOSFET Module using a Controllable Current-Sourced Gate Driver
Conference: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/07/2019 - 05/09/2019 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2019
Pages: 6Language: englishTyp: PDF
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Authors:
Wiesemann, Julius; Sommer, Christian; Mertens, Axel (Institute for Drive Systems and Power Electronics, Leibniz Universität Hannover, Germany)
Abstract:
This paper presents the characterization of a 1.2 kV SiC MOSFET half-bridge module in conjunction with a novel gate driver that allows to change the turn-on speed while in operation. First, the design of a test set-up composed of a SiC MOSFET half-bridge module, a DC-link board and a gate driver board is described. Switching waveforms and switching energies at different currents, voltages and switching speeds are presented. The results show advantages over the classical approach where the turn-on speed is fixed by a gate resistor. Finally, possible applications of the novel gate driver are discussed.