New GaN Technology for Superior Efficiency in Electric Vehicles
Conference: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/07/2019 - 05/09/2019 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2019
Pages: 3Language: englishTyp: PDF
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Authors:
Scrimizzi, Filippo; Fusillo, Filadelfo; Gambino, Giusy (STMicroelectronics, Italy)
Abstract:
ST’s new gallium-nitride (GaN) transistor prototypes can be used in a large range of automotive applications to provide the necessary performance improvements demanded by the ever increasing car electrification requirements. Our low voltage GaN high-electron-mobility transistors (HEMTs) are highly suitable for mild hybrid powertrain systems as they render new power conversion concepts possible with faster switching operations and improved reliability.