GaN-Based High-Frequency Inverter for Highly-Dynamic Ultra-Low Ripple Applications
Conference: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/07/2019 - 05/09/2019 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2019
Pages: 5Language: englishTyp: PDF
Personal VDE Members are entitled to a 10% discount on this title
Authors:
Wienhausen, Arne Hendrik; Kienscherf, Philipp; De Doncker, Rik W. (Institute for Power Electronics and Electrical Drives (ISEA), RWTH Aachen University, Germany)
Abstract:
This paper presents a modular inverter system, targeting applications where a high modulation bandwidth, a low ripple current and a high inverter efficiency are of utmost importance. By using multiple interleaved half-bridge module building blocks, the dynamic performance and the rated output power can easily be scaled to meet the specific system requirements. Low-voltage GaN power transistors are used to achieve a very high effective switching frequency of 24MHz, which shifts the harmonic content beyond the frequency band of interest. This makes the developed inverter suitable for the use in applications where bulky and inefficient linear amplifiers are considered state-of-the-art.