Current measurement of GaN power devices using a frequency compensated SMD shunt
Conference: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/07/2019 - 05/09/2019 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2019
Pages: 8Language: englishTyp: PDF
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Authors:
Meissner, Markus; Schmitz, Jan; Weiss, Felix; Bernet, Steffen (Dresden University of Technology, Chair of Power Electronics, Germany)
Abstract:
Semiconductor materials as Silicon Carbide (SiC) and Gallium Nitride (GaN) enabling development of very fast switching and low loss power devices. The fast switching transients demanding high bandwidth measurement capability, while not influencing the switching behaviour. In this paper a current measurement method, using a low inductive SMD shunt with a frequency compensation network, is introduced.