Using IGBT with antiparallel diode in SOT-223
Conference: PCIM Asia 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/26/2019 - 06/28/2019 at Shanghai, China
Proceedings: PCIM Asia 2019
Pages: 5Language: englishTyp: PDF
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Authors:
Rebec, Mitja; Schmoelzer, Bernd (Infineon Technologies Austria AG, Austria)
Abstract:
The need for improved power density and lower system cost pushes designers to find new and innovative alternatives to traditional design choices. One area where cost and space reduction is possible is in the design and packaging selection of high-voltage power switches such as IGBTs. It is especially important for low-power home appliances below 300 W where a heat sink is not desirable. Infineon Technologies plan to release an IGBT with a monolithically integrated reverse-conducting diode in a small SOT-223 package to reduce the package cost and size compared to the conventional DPAK package. This cost-optimized product portfolio called RC-D2 will enable further system-level cost improvement.