Electromagnetic analysis of Press Pack IEGT with Transient Skin and Proximity Effects
Conference: PCIM Asia 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/26/2019 - 06/28/2019 at Shanghai, China
Proceedings: PCIM Asia 2019
Pages: 5Language: englishTyp: PDF
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Authors:
Dai, Siyang; Song, Xueguan; Li, Guofeng (Dalian University of Technology, China)
Ji, Bing (University of Leicester, UK)
Pickert, Volker (Newcastle University, UK)
Abstract:
Press Pack Injection Enhanced Gate Transistors (PP-IEGTs) have been widely implemented in High Voltage Direct Current (HVDC) applications. Their electrical and thermal performance are of key importance to investigate their reliability and lifespan. In this paper, the electromagnetic performance of internal paralleled chips is investigated by accounting for the skin and proximity effects during the turn-on switching transient. Finite element analysis is applied to illustrate current and magnetic flux distribution within the PP-IEGT. In terms of chip location, simulation results present different power loss of each chip. The gap distance between chips is also discussed based on electromagnetic performance.