A practical example of hard paralleling SiC MOSFET modules
Conference: PCIM Asia 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/26/2019 - 06/28/2019 at Shanghai, China
Proceedings: PCIM Asia 2019
Pages: 7Language: englishTyp: PDF
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Authors:
Zheng, Ziqing; Zhang, Minda (Infineon, China)
Lenze, Andre; Mainka, Krzysztof (Infineon, Germany)
Levett, David (Infineon, USA)
Abstract:
Is it possible to design a matched gate driver and power PCB to hard parallel four 6 mOmega 1200 V SiC MOSFET modules? This was the question that this paper sets out to answer. The practical results of this design project are described including: the gate driver schematics, PCB layout with the key tracking design issues, and waveforms of both static and dynamic current sharing performance. Finally, a Monte Carlo statistical analysis to demonstrate the effects on current sharing due to production spreads in device parameters such as on resistance.