2nd Generation Trench Gate SiC MOSFETs for All-SiC Module
Conference: PCIM Asia 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/26/2019 - 06/28/2019 at Shanghai, China
Proceedings: PCIM Asia 2019
Pages: 6Language: englishTyp: PDF
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Authors:
Chonabayashi, Mikiya; Okumura, Keiji; Sekino, Yusuke; Iwamoto, Susumu; Miyajima, Masaaki; Kumada, Keishirou; Shiigi, Takashi; Kimura, Hiroshi; Onishi, Yasuhiko; Isozaki, Makoto; Harada, Takahito; Okita, Soichi; Kobayashi, Yasuyuki (Fuji Electric Co., Ltd., Japan)
Abstract:
Recently the main requirements of the market are further downsizing and higher efficiency of power conversion systems. For this reason, enhancing the power density of power modules will be the key to succeed. In this paper, electrical characteristics for All-SiC modules with the 2nd generation trench gate SiC MOSFETs have been presented. Moreover, it has been demonstrated that 3 rank extension for inverter capacity could be achieved by using All-SiC modules rather than conventional Si IGBT modules. Therefore, these modules will realize further downsizing and higher efficiency of power conversion systems.