A New Fast Reverse Recovery Super-Junction MOSFET for high efficiency and reliable EV charging applications
Conference: PCIM Asia 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/26/2019 - 06/28/2019 at Shanghai, China
Proceedings: PCIM Asia 2019
Pages: 6Language: englishTyp: PDF
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Authors:
Choi, Wonsuk; Kim, Sungnam; Kim, Dongwook; Son, Dongkook (ON Semiconductor, Korea)
Abstract:
The fast DC charging pole is rapidly expanding, especially in China. The fast chargers are required to make it possible to drive longer distances without spending several hours charging the battery and overcome range limitation. The three-phase input Vienna PFC and two-level full-bridge LLC resonant topologies are widely used in fast EV charger to increase efficiency by using 650V SJ MOSFETs under variable load conditions. A fast recovery body diode Super Junction (SJ) MOSFET called, SUPERFET(r) III FRFET(r), combines the best-in-class body diode performance with low dynamic resistance (ROSS) and improved switching transients to optimize efficiency in resonant converters. In this paper, power MOSFET parameters of new fast recovery SJ MOSFETs are analyzed in the two-level full bridge LLC resonant converter used for EV fast DC charger, along and their impact on reliability.