Impact of the Dynamic On-State Resistance Increase in a Phase-Shifted GaN Low Voltage Converter

Conference: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07/07/2020 - 07/08/2020 at Deutschland

Proceedings: PCIM Europe digital days 2020

Pages: 8Language: englishTyp: PDF

Authors:
Kahl, Tino; Kuring, Carsten; Dieckerhoff, Sibylle (Chair of Power Electronic, Technische Universit├Ąt Berlin, Germany)
Fromme, Christopher; Tannhaeuser, Marvin (Siemens AG, Smart Infrastructure, Low Voltage Products, Germany)

Abstract:
In a phase-shifted converter applying low voltage normally-off GaN transistors, the dynamic on-state resistance shows a marginally increasing value at low currents but increases unexpectedly at higher currents. Since the converter is designed for a high current application, the observed Ron-degradation has a particular negative effect on the achievable output power and efficiency. This paper investigates the influence of the increased on-state resistance in continuous half-bridge operation and in the phase-shifted full-bridge converter. In order to show the ongoing improvements in GaN device technology, double-pulse and continuous investigations are conducted with transistors from different production lots.