Breaking the IGBT Eloss/VCEsat trade off relationship by wedding Si IGBT + SiC MOSFET

Conference: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07/07/2020 - 07/08/2020 at Deutschland

Proceedings: PCIM Europe digital days 2020

Pages: 7Language: englishTyp: PDF

Kochoska, Sara; Neyer, Thomas (ON Semiconductor, Germany)
Park, Kyeongseok (ON Semiconductor, Republic of Korea)

In this paper hybrid switches or later in the text referred as H-SW consisting either of high speed or low VCEsat Si IGBTs, connected in parallel with low current SiC MosFET, have been proposed as a novel approach to combine the best features of Silicon IGBTs and Silicon Carbide MosFET switches at the lowest possible costs. The requirements for lower losses and higher switching frequencies has led to the development of SiC devices, but their higher cost has slowed their adoption. In addition to the significant acceleration in switching speed, the SiC MosFET is able to lower the VCEsat and enables freewheeling through its body diode.