Investigation of Extended IGBT Desaturation in the Context of a Si SiC Hybrid Switch for Inverters with Resonant Load
Conference: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07/07/2020 - 07/08/2020 at Deutschland
Proceedings: PCIM Europe digital days 2020
Pages: 7Language: englishTyp: PDF
Authors:
Meissner, Michael; Hoffmann, Klaus F. (Helmut Schmidt University, Germany)
Abstract:
A hybrid switch composed from a silicon (Si) IGBT and a silicon carbide (SiC) MOSFET may be a possibility to reach lower losses within resonant converters. In addition, the desaturation of the IGBT before switching-off may be beneficial. This approach is investigated with a supplementary inductor within the IGBT path and a corresponding modified desaturation circuit.