Investigation on the Physics Mechanism of Implanted Proton for 1200V FRD Application
Conference: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07/07/2020 - 07/08/2020 at Deutschland
Proceedings: PCIM Europe digital days 2020
Pages: 4Language: englishTyp: PDF
Authors:
Zhang, Zhonghua; Luo, Haihui; Liu, Pengfei; Tang, Zhihui; Xiao, Qiang; Yuan, Bin; Tan, Canjian; Yao, Yao; Liu, Guoyou (State key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou, China & Zhuzhou CRRC Times Electric Co.,Ltd., Zhuzhou, China)
Deviny, Ian (Research and Development Centre, Dynex Semiconductor Ltd., Lincoln, UK)
Abstract:
This work comprehensively investigates the physics mechanism of multi-implanted proton annealed at different temperature based on 1200V FRD. The meaningful result shows that VF increases, while EREC decrease with increasing anneal temperature, and the corresponding physics mechanism is discussed in the view point of doping profile and defect evolution. Furthermore, based on the optimized anneal temperature and proton implant position, the fabricated 1200V FRD shows high ruggedness, good softness, and low EREC.