Physics-Based Device Model for A Silicon Carbide Trench MOSFET
Conference: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07/07/2020 - 07/08/2020 at Deutschland
Proceedings: PCIM Europe digital days 2020
Pages: 4Language: englishTyp: PDF
Horiguchi, Takeshi; Masuhara, Takashi; Mukunoki, Yasushige (Advanced Technology R&D Center, Mitsubishi Electric Corporation, Japan)
Sugawara, Katsutoshi (Power Device Works, Mitsubishi Electric Corporation, Japan)
This paper describes a physics-based compact model for a silicon carbide trench MOSFET. The authors introduce the drain-source voltage dependency in channel mobility to reproduce the output characteristics. Hence, the proposed compact device model can reproduce the experimental static characteristics, especially in higher gate-source voltage in a linear region. In addition to the static characteristics, the simulated dynamic properties are also in good agreement with the experimental ones. The proposed compact device model is expected to be a promising circuit simulation tool.