SiC MOSFET Body Diode Qualification Testing Platform with Repetitive Switching Current Stressing

Abstract:
This paper introduces a Body Diode Pulsed Current Stress (BDPCS) Test Platform for the purposes of testing the parasitic body diode of a SiC MOSFET whilst the device is in an off state. The most common use for the body diode in this condition is as a freewheeling or rectifier diode in applications such as the dead time during synchronous rectification. The BDPCS test platform employs a number of features that allow the user to fine-tune control various test conditions throughout the system. It can be used as a test platform for products qualification purposes or for reliability testing purposes. This custom test system enables testing of the body diode of the Device Under Test (DUT) at current stress levels beyond those DC ratings in the datasheet. Measuring the body diode forward voltage drop (VSD), onresistance (RDS_ON), threshold voltage (VGS(TH)), and breakdown voltage (V(BR)DSS) parameters after body diode stress tests allows for better statistical understanding of device degradation.