Comparative Study of Packaging Effects of SiC MOSFETs on Their Performances in a 10 kW Boost Converter
Conference: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07/07/2020 - 07/08/2020 at Deutschland
Proceedings: PCIM Europe digital days 2020
Pages: 5Language: englishTyp: PDF
Authors:
Hu, Yuequan; Shao, Jianwen; Ong, Teik Siang; Rice, Julius; Solovey, James (Wolfspeed/Cree, USA)
Abstract:
This paper presents a comparative study of packaging effects of Silicon Carbide (SiC) MOSFETs on switching losses and efficiency for a 10 kW DC/DC Boost converter. SiC devices have now received wide applications such as EV chargers, solar inverters, and energy storage. However, the parasitic source inductance of SiC MOSFETs would slow down the switching due to the voltage induced by high di/dt opposing the gate-drive voltage. A separate source lead (fourth lead - Kelvin source) for the gate drive can solve the problem. A comparison of the double pulse test (DPT) switching losses of a 3-lead and 4-lead MOSFET with Kelvin source is detailed in this work. Moreover, these two types of devices have also been tested in the 10 kW DC/DC boost converter, and comparison of waveforms, switching losses, efficiency, and thermal measurement are provided to show the benefits of 4-lead package for SiC power MOSFETs.