Parametric Optimisation of New SiC Power MOSFET Model Using Experimental Performance Data

Conference: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07/07/2020 - 07/08/2020 at Deutschland

Proceedings: PCIM Europe digital days 2020

Pages: 6Language: englishTyp: PDF

Alhoussein, Ali (VEDECOM ITE, France & Normandie Univ, UNIROUEN, ESIGELEC, IRSEEM, France)
Alawiyeh, Hadi (VEDECOM ITE, France)
Riah, Zouheir; Azzouz, Yacine (Normandie Univ, UNIROUEN, ESIGELEC, IRSEEM, France)

In this paper, we propose a new model for SiC power MOSFETs. The proposed model includes static and dynamic parts as well as parasitic elements. An experimental test bench is set up to extract the characteristics of the devices. Experimental data obtained from the test bench is used with an adaptation of the genetic algorithm to optimize the proposed model’s parameters. Experimental validation is carried out on the C3M0065100K SiC MOSFET from CREE. The model shows promising results in output and capacitance voltage characteristics reproduction as the deviation from experimental data is lower than 5% for all the measurements.