H3TRB-Test on 1200 V SiC Schottky Diodes After Previous Operation

Conference: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07/07/2020 - 07/08/2020 at Deutschland

Proceedings: PCIM Europe digital days 2020

Pages: 6Language: englishTyp: PDF

Hoffmann, Felix; Kaminski, Nando (University of Bremen, Institute for Electrical Drives, Power Electronics and Devices, Germany)
Friedrichs, Peter (Infineon Technologies AG, Germany)

In this work, an investigation of the impact of previous thermo-mechanical stress on the ruggedness of silicon carbide power semiconductors against humidity are presented. A long term H3TRB test on a total of 16 commercially available 1200 V SiC Schottky diodes was performed. Prior to H3TRB testing 8 diodes had been preconditioned by operating them in a DC chopper with inductive load and an RMS current of 25 A for 300 h. The H3TRB test was performed for 3000 h. Even after such a long testing time, no humidity-driven degradation or failure of any device could be observed.