A High Power Density Inverter Utilizing SiC-MOSFET and Fair Comparison Method of the Same Kind of Power Converters.

Conference: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07/07/2020 - 07/08/2020 at Deutschland

Proceedings: PCIM Europe digital days 2020

Pages: 6Language: englishTyp: PDF

Sato, Ikuya; Hori, Motohito; Tanaka, Takaaki; Yamada, Ryuji; Toba, Akio (Fuji Electric Co., Ltd., Japan)

A high power density three-phase full-bridge inverter with forced air cooling for motor drive is presented. The inverter utilizes newly developed SiC-MOSFET chips having trench-gate structure, which contributes its high power density and high efficiency. The paper describes the concept and the design of the inverter followed by experimental results of its prototype, which prove the achievement of the targeted power density of 110kVA/L. The other important part of the paper is a proposal of a description manner for fair comparison of this kind of high power density inverters, which is motivated by the current unordered situation.