Experimental Evaluation of Simulation Model for Power Losses Estimation using 1200 V SiC MOSFET

Conference: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07/07/2020 - 07/08/2020 at Deutschland

Proceedings: PCIM Europe digital days 2020

Pages: 6Language: englishTyp: PDF

Jappe, Tiago; Voglitsis, Dionisis (ON Semiconductor, Solution Engineering Center – SEC, Munich, Germany)
Mussa, Samir Ahmad (Federal University of Santa Catarina, Florianopolis, Brazil)

Simulation Models are experimental evaluated for conduction and switching losses parameters in order to support proper power converter losses estimation. Firstly, Spice–models are used and experimental validated by proper double-pulse test. Based on correlated experimental and simulation losses parameters, the power converter semiconductor losses can be mapped based on power converter operation points. For this approach 1200 V SiC power devices are used as reference for analysis. The experimental results verify high–accuracy of power losses estimation based on the proposed methodology.