Characterization of Threshold Voltage for Application-Oriented Power Cycling Conditions for Wide-Bandgap Power Devices
Conference: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07/07/2020 - 07/08/2020 at Deutschland
Proceedings: PCIM Europe digital days 2020
Pages: 7Language: englishTyp: PDF
Authors:
Munoz Baron, Kevin; Sharma, Kanuj; Koch, Dominik; Kallfass, Ingmar (Institute of Robust Power Semiconductor Systems, University of Stuttgart, Germany)
Nitzsche, Maximilian; Ziegler, Philipp (Institute for Power Electronics and Electrical Drives, University of Stuttgart, Germany)
Abstract:
A quasi-threshold voltage measurement setup is implemented in a test bench to allow online parameter observation during power cycling tests for silicon carbide MOSFETs. The threshold voltage is known to change during operation, either temporarily or non-reversibly, due to degradation and trapping phenomena in the MOS-structure. To evaluate different assembly and interconnection technologies, for conditions as close to the real application as possible, an application-oriented power cycling test setup is examined. The proposed test bench allows the measurement of a quasi-threshold voltage under the influence of different off-state drain-source and gate voltages. Measurements show a decrease of quasi-threshold voltage with increasing off-state drain-source voltage and negative gate-source voltage.