SiC MOSFETs Gate Driver Systems for effective Energy Switching Loss Evaluation

Conference: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07/07/2020 - 07/08/2020 at Deutschland

Proceedings: PCIM Europe digital days 2020

Pages: 8Language: englishTyp: PDF

Liberti, Anselmo Gianluca; Pulvirenti, Mario; Montoro, Gionatan; Sciacca, Angelo Giuseppe; Salvo, Luciano; Nania, Massimo (STMicroelectronics, Italy)

The aim of this paper is to analyze the impact of the Gate Driver System on SiC MOSFETs switching performance by means of Double Pulse Test procedure. A simple Gate Driver System structure has been considered in this analysis, comparing three different configurations. Experimental tests with half bridge converter, have been executed, testing Gate Driver Systems with different SiC MOSFETs.