Experimental study of the self-disturbance phenomena in a halfbridge configuration of Si IGBT and SiC MOSFET switches

Conference: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07/07/2020 - 07/08/2020 at Deutschland

Proceedings: PCIM Europe digital days 2020

Pages: 8Language: englishTyp: PDF

Geramirad, Hadiseh; Vollaire, Christian (SAS SuperGrid Institute, ITE, France & Ecole Centrale de Lyon, Ampere lab CNRS 5005, France)
Morel, Florent; Lefebvre, Bruno (SAS SuperGrid Institute, ITE, France)
Breard, Arnaud (Ecole centrale de Lyon, Ampere lab CNRS 5005, France)

This paper investigates the gate-driver design challenges encountered due to the fast switching of wide band-gap semiconductors (here, SiC MOSFETs) in the half-bridge configuration. It discusses precisely the common-mode current generated by fast switching passing through gate-driver, which leads to driving-voltage perturbations and disturbs the correct triggering of switches. This phenomenon is described here as self-disturbance and the experimental study shows that it is exacerbated with SiC MOSFETs, when compared with Si IGBTs. The solution proposed in this article is to block the generated noise linked to self-disturbance phenomenon by placing a common-mode choke into the gate path. The proposed solution is compared with the classical active Miller-clamp protection solution. The experimental results from 1.7kV, 300A SiC MOSFET validate the solution. The solution proposed in this work allows to keep the MOSFET gate-voltage perturbation lower than the MOSFET threshold voltage while it does not increase the switching losses. Experimental results show that by implementing the proposed solution, it is possible to reduce the input common-mode current through the gate driver by up to 20%.