Short-circuit-current protection of SiC power MosFet including characterization by measurement

Conference: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07/07/2020 - 07/08/2020 at Deutschland

Proceedings: PCIM Europe digital days 2020

Pages: 6Language: englishTyp: PDF

Authors:
Reiff, David; Staudt, Volker (Ruhr University Bochum, Germany)
Xie, Shunmeng; Mei, Wenqing (CRRC Zhuzhou Institute, China)

Abstract:
Short circuit measurements always introduce special challenges to the measurement setup and equipment. Especially in the area of silicon-carbide (SiC) MosFet where very low DC-link inductances are needed the shortcircuit currents will achieve high values with very steep slopes. Not only the measurement but rather the restrainment of these currents is a challenge as well. This paper will show a measurement setup to verify the reliable detection and limitation of short circuit events at a low inductive DC busbar. The analysis of the results is based on specially designed and carefully calibrated measurement equipment including a self-made Rogowski coil. The measurement results are presented as well as the characterization, verification and calibration of this Rogowski coil.