Using 1200 V three-phase gate driver to drive SiC MOSFETs

Conference: PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
11/16/2020 - 11/18/2020 at Shanghai, China

Proceedings: PCIM Asia 2020

Pages: 4Language: englishTyp: PDF

Song, Jinsheng; Raffo, Diego (Infineon Technologies Americas Corp., USA)

As third-generation power semiconductor devices, SiC MOSFETs provide superior performance, which from the perspective of switching frequency and power density, can bring power electronic systems to the next level. SOI (silicon-on-insulator)-based level-shifter gate driver ICs offer a high integration level, high performance and low cost, a good solution for driving SiC MOSFETs. This paper describes a new SOI-based 1200 V three-phase gate driver IC, and its superior performance and robustness features. SiC MOSFET-based system applications can benefit from this new gate driver IC.