On-State Characteristics Measurement of SiC MOSFET

Conference: PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
11/16/2020 - 11/18/2020 at Shanghai, China

Proceedings: PCIM Asia 2020

Pages: 5Language: englishTyp: PDF

Chai, Xiaoguang; Yuan, Tianshu; Kang, Yuhui; Ning, Puqi; Cao, Han (Institute of Electrical Engineering, Chinese Academy of Sciences, China)

To better utilize SiC MOSFETs, this paper proposes three circuits to realize the on-state characteristics measurement of SiC MOSFETs. It is proved by experiments that the impact of parasitic capacitances can be effectively suppressed by connecting a switch and a diode in series and keeping SiC MOSFETs on.