Robust buffer layer of 650 V Super-junction MOSFET
Conference: PCIM Asia 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
11/16/2020 - 11/18/2020 at Shanghai, China
Proceedings: PCIM Asia 2020
Pages: 5Language: englishTyp: PDF
Authors:
Kang, Soohyun; Lee, Geunhyoung; Jung, Junhee; Kang, Youngjin; Ko, MK (ON Semiconductor, Republic of Korea)
Abstract:
Buffer layer of 650V Super-junction MOSFET is studied for High Temperature Reverse Bias (HTRB) improvement. The quasi-stationary avalanche simulation and experimental results provide the buffer design has a key role to avoid catastrophic failure during HTRB test.