Novel Approach to Model GaN-HEMT Capacitances using Sigmoid Functions
Conference: PCIM Europe digital days 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/03/2021 - 05/07/2021 at Online
Proceedings: PCIM Europe digital days 2021
Pages: 8Language: englishTyp: PDF
Authors:
Dobusch, Julian; Duerbaum, Thomas (Friedrich-Alexander-University Erlangen-Nürnberg (FAU), Electromagnetic Fields, Erlangen, Germany)
Schwanninger, Raffael (Friedrich-Alexander-University Erlangen-Nürnberg (FAU), Institute of Power Electronics (LEE), Nürnberg, Germany)
Abstract:
Simulation of circuits is of high importance in the design process of power electronic devices. Modeling the nonlinear behavior of switches can be challenging, especially regarding the parasitic capacitances. They, however, play a crucial role in determining switching losses as well as voltage slopes of soft switched converters. This paper presents an approach to improve the SPICE model of a GaN-HEMT by modeling the nonlinear datasheet slope of the switch capacitances with continuous sigmoid functions resulting in better accordance between datasheet and simulation model.