High-Power Density DC-DC Converters Using Highly-Integrated Half-Bridge GaN ICs
Conference: PCIM Europe digital days 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/03/2021 - 05/07/2021 at Online
Proceedings: PCIM Europe digital days 2021
Pages: 8Language: englishTyp: PDF
Authors:
Basler, Michael; Moench, Stefan; Reiner, Richard; Benkhelifa, Fouad; Quay, Ruediger; Ambacher, Oliver (Fraunhofer Institute for Applied Solid State Physics (IAF), Germany)
Weidinger, Gerald; Weis, Gerald (AT&S Austria Technologie & Systemtechnik Aktiengesellschaft, Austria)
Kallfass, Ingmar (Institute of Robust Power Semiconductor Systems (ILH), University of Stuttgart, Germany)
Abstract:
This work develops high-power density DC-DC converters by combining monolithically integrated lowvoltage half-bridge GaN ICs with two advanced packaging approaches. An in-house fabricated monolithically integrated half-bridge with application-specific gate width ratio is investigated. The halfbridge GaN ICs are assembled and compared using both PCB-embedding and flip-chip assemblies. Finally, DC-DC converters with a max. power of 30 W and power density of >1000 W/in3 are realized by combing these GaN Power ICs and advanced packaging tecnologies.