An Improved Performance of High Voltage RC-IGCT for Applications up to 5.3 kVDC
Conference: PCIM Asia 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09/09/2021 - 09/11/2021 at Shenzhen, China
Proceedings: PCIM Asia 2021
Pages: 6Language: englishTyp: PDF
Authors:
Vemulapati, Umamaheswara Reddy; Stiasny, Thomas; Winter, Christian; Corvasce, Chiara (Hitachi ABB Power Grids Ltd., Semiconductors, Lenzburg, Switzerland)
Luescher, Matthias (ABB Switzerland Ltd., Motion System Drives, Turgi, Switzerland)
Abstract:
This paper presents the design modifications and improved technology trade-off performance of the high voltage Reverse Conducting-Integrated Gate Commutated Thyristor (RC-IGCT), which is designed and manufactured to be used in demanding high voltage applications for dc-link voltages of up to 5.3 kV. This paper also presents the cosmic ray hardiness of this device. Furthermore, it presents the system level simulations to evaluate the maximum possible output current over the speed range of the drive using three level neutral point clamp (3L-NPC) topology.