Improvement of SCSOA, I I2t and reliability of in in-vehicle power modules by RC RC-IGBT and leadframe structure
Conference: PCIM Asia 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09/09/2021 - 09/11/2021 at Shenzhen, China
Proceedings: PCIM Asia 2021
Pages: 5Language: englishTyp: PDF
Authors:
Isono, Tomohiro; Nakano, Hayato; Kitamura, Akio; Inoue, Daisuke; Yoshida, Souichi (Fuji Electric Co., Ltd, Japan)
Abstract:
This paper describes the improvement of short circuit safety operating area (SCSOA), I2t capability and reliability of power module used in electric vehicles (EV). As a result of the comparison between the conventional structure of IGBT (Insulated Gate Bipolar Transistor) / FWD (Free Wheel Diode) with bondwires and the proposed structure of RC-IGBT (Reverse Conduction IGBT) with leadframe, the proposed structure shows 2.4 times higher I2 capability. Furthermore, the accumulation of the cyclic fatigue damage ratio of the proposed structure can achieve 60% lower than the conventional structure.