A Flexible, Physically based SPICE Model for the JFET Resistance in Silicon Carbide and Super-Junction MOSFETs
Conference: PCIM Asia 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09/09/2021 - 09/11/2021 at Shenzhen, China
Proceedings: PCIM Asia 2021
Pages: 5Language: englishTyp: PDF
Authors:
Jia, Kan; Xiao, Yunpeng (ON Semiconductor, China)
Betak, Petr; Foff, Jaromir; Lehocky, Jiri; Zurek, Dan (ON Semiconductor, Czech Republic)
He, Canzhong; Victory, James (ON Semiconductor, USA)
Abstract:
This paper proposes a novel, physically based SPICE model for the JFET region resistance in Silicon Carbide (SiC) and Super-Junction MOSFETs. The process parameter based model considers the JFET region resistance nonlinearity due to junction depletion and velocity saturation effects. The SPICE agnostic model ports across multiple industry standard simulation platforms. The model has been validated with ON Semiconductor's advanced SiC MOSFET and Super-Junction technologies.