Circuit Protection with SiC FETs in dual-gate configuration

Conference: PCIM Asia 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09/09/2021 - 09/11/2021 at Shenzhen, China

Proceedings: PCIM Asia 2021

Pages: 8Language: englishTyp: PDF

Authors:
Bhalla, Anup; Li, Xueqing; Dodge, Jonathan (United Silicon Carbide Inc., Princeton, NJ, USA)

Abstract:
Interest in solid-state circuit breakers and solid-state power controllers has grown rapidly in recent years. SiC JFETs have long been considered ideal devices for this application, given their ability to have low on-state resistance at high voltage ratings, without compromising their ability to limit current when needed. We examine the use of normally-off SiC FETs in a dual gate configuration to simplify the development of high current DC and AC circuit breakers.