A study to use 600V GaN HEMTs to drive motors
Conference: PCIM Asia 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09/09/2021 - 09/11/2021 at Shenzhen, China
Proceedings: PCIM Asia 2021
Pages: 4Language: englishTyp: PDF
Authors:
Song, Jinsheng (Infineon Technologies Americas Corp., USA)
Abstract:
As third-generation power semiconductor devices, GaN HEMTs (gallium nitride high electron mobility transistor) provide superior performance, which from the perspective of efficiency and power density, can bring power electronic systems to the next level. How to properly drive GaN HEMTs and maximize their capability for motor-drive applications is an emerging and interesting topic. This paper demonstrates the feasibility of driving GaN HEMTs and the benefits of using them for motor-drive applications.