New SIPOX (SIPOS/Oxide) Edge Termination Shows Excellent Robustness and 50% Lower Leakage at Tj=150 °C for 6.5kV IGBTs
Conference: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2022 - 05/12/2022 at Nürnberg, Germany
doi:10.30420/565822033
Proceedings: PCIM Europe 2022
Pages: 7Language: englishTyp: PDF
Authors:
Ngwendson, Luther-King; Su, Arthur; Wang, Yangang; Coulbeck, Lee (Dynex Semiconductor, UK)
Abstract:
This paper reports for the first time, the design features, performance and reliability evaluation of a new SIPOX-JTE (SIPOS/OXide-Junction Termination Extension) structure suitable for high voltage FRDs, IGBTs and similar devices. The concept is called SIPOX because over the termination region, the ratio of silicon/SIPOS interface area is limited and controlled by oxide segments with silicon/SIPOS interfaces only in a small percentage of the JTE’s or VLD’s p- region. By limiting the silicon/SIPOS interface area in the SIPOX-JTE concept we show by simulation and experimental results that the leakage current (Ices) at Tj=150 °C can be reduced by up to 50% in 6.5kV IGBTs. In addition, it is also shown that the SIPOX-JTE devices are stable under 150 °C HTRB test conditions and show robust H3TRB and HV-H3TRB performances during and after 1000hrs endurance period.