Radiation Hardness of Si- and SiC-Power-MOSFETs in Particle Accelerator Environments
Conference: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2022 - 05/12/2022 at Nürnberg, Germany
doi:10.30420/565822163
Proceedings: PCIM Europe 2022
Pages: 7Language: englishTyp: PDF
Authors:
Khani, Milad; Griepentrog, Gerd (Technische Universität Darmstadt, Germany)
Sokolov, Alexey; Kozlova, Ekaterina (GSI Helmholtzzentrum für Schwerionenforschung, Germany)
Abstract:
A model to quantify the probability of an single event burnout (SEB) in a silicon-carbide MOSFET was developed in dependence of neutron spectrum and chip volume. A test setup with each 20 silicon- and silicon-carbide MOSFETs was installed for 177 days in the tunnel of a heavy ion synchrotron accelerator in order to conduct a blocking test and verify the prediction model. The leakage current of each MOSFETs was examined. Three Si-MOSFETs suffered from a SEB. These three MOSFETs were x-rayed and a microsection sample was taken.