A High-Speed and High-Accuracy Power Device Waveform Simulation Method
Conference: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2022 - 05/12/2022 at Nürnberg, Germany
doi:10.30420/565822171
Proceedings: PCIM Europe 2022
Pages: 6Language: englishTyp: PDF
Authors:
Murata, Makoto; Imamura, Asuma; Fujita, Shimpei; Nakamura, Yohei; Kuroda, Naotaka; Yamaguchi, Atsushi (ROHM Co., Ltd., Japan)
Filsecker, Felipe (ROHM Semiconductor GmbH, Germany)
Abstract:
This paper presents a method for accurately simulating switching waveforms of silicon carbide (SiC) MOSFETs. To improve the simulation accuracy, a detailed simulation circuit is used which not only applies device simulation models but also includes the parasitic inductance of the package and printed circuit board (PCB) patterns. SiC MOSFETs evaluation board and its simulation circuit were implemented, and the actual and simulated waveforms were compared. By using electromagnetic field analysis adding the mutual inductance between terminals to the self-inductance, the accuracy of the switching waveforms was greatly improved.