Compact Half-Bridge Module for a Charger Application Utilizing GaN Power Devices with Integrated Driver
Conference: PCIM Europe 2022 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/10/2022 - 05/12/2022 at Nürnberg, Germany
doi:10.30420/565822282
Proceedings: PCIM Europe 2022
Pages: 8Language: englishTyp: PDF
Authors:
Weimer, Julian; Koch, Dominik; Kallfass, Ingmar (Institute of Robust Power Semiconductor Systems, University of Stuttgart, Germany)
Abstract:
This paper presents the design and analysis of a gallium nitride (GaN) power stage half-bridge for a mid-power high-density charger application. Volume and area of a hardware prototype were reduced by 50% compared to the manufacturer’s reference design utilizing minimal footprint surface-mounted devices (SMD), 4-layer printed circuit board (PCB) structure, edge plating and adjusted bootstrapping for 50 Hz, 60 kHz and 550 kHz operation. Thermal and electrical effects of the compact design based on commercial discrete packages are investigated and discussed. Challenges posed by DC bias voltage dependence of ceramic supply capacitors are outlined. In addition, new bootstrapping challenges due to electromagnetic interference (EMI) requirements of the integrated driver circuit of the power stage are identified and addressed with in application pre-charging.