Acquisition of the DC-Link Voltage Only by Measuring the Gate-Source-Voltage of a SiC MOSFET
Conference: PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/09/2023 - 05/11/2023 at Nürnberg, Germany
doi:10.30420/566091104
Proceedings: PCIM Europe 2023
Pages: 8Language: englishTyp: PDF
Authors:
Li, Zheming; Bakran, Mark-M. (Department of Mechatronics, Center of Energy Technology, University of Bayreuth, Germany)
Abstract:
This paper introduces a special DC-link voltage measurement method for high voltage SiC power devices which has no galvanic connection to high voltages like the DC-link and the drain-source voltage. The DC-link voltage is measured indirectly through the gate-source voltage during the diode turn-on. Due to the reduced hardware effort and cost, this method is more suitable for active gate drivers with variable output stages than the commonly used high voltage divider. The optimum output stage can be picked out regarding the real-time DC-link voltage in order to fully exploit the device blocking voltage.