Current Measurement Comparison for SiC MOSFET Modules

Abstract:
In evaluating switching performance of SiC MOSFET modules, it is challenging to measure accurate current waveforms because of high speed (rising and falling time, di/dt) and high current. This paper used the latest current measurement technology in measuring SiC MOSFET switching. Different shunt resistors from T&M Research Product, including bar clamping type (W-1-01C-1FC, 800 MHz) for high current module and Series SDN type for discrete and low current module, Rogowski coil from Iwatsu (30 MHz and 100 MHz) and Rogowski coil from PEM (30 MHz) were compared.