Electronic and Semiconductor Testing Using Lock-in Thermography with Cameras in HD Resolution for Failure Detection

Abstract:
There is a rising demand for performant power electronics components and systems due to rising the importance of the integration of renewable energy sources into the power networks, wide-spread e-mobility and many other related topics. In this framework new materials like GaN or SiC come into play as they are more energy efficient and allow for a higher power density and increased switching speeds. Still the operations result in higher working temperatures up to 600 °C. Infrared thermography can help to manage the respective challenges as it allows to identify components´ failures by lock-in thermography (LIT) and additionally measure the components ´ working temperatures. Challenges for infrared thermography in this context are the component size and the different emissivities of the components´ surfaces. Especially component failures resulting in minimal temperature changes only can be detected by thermography using lock-in thermography (LIT).